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LiAlO2 Lithium aluminate single crystal matches very well to the GaN lattice, so it becomes a potential group III-V nitride film substrate material.
Product Description
LiAlO2 Lithium aluminate single crystal matches very well to the GaN lattice, so it becomes a potential group III-V nitride film substrate material.
Material Properties
| Main performance parameters | |
| Crystal structure | the four directions |
| Lattice constant | a=5.17 A c=6.26 A |
| Melting point (℃) | 1900 |
| Density | 2.62（g/cm3） |
| Hardness | 7.5（mohs） |
| Mismatch rate with GaN <001> | 1.4% |
| Size | 10x3,10x5,10x10,15x15,20x15,20x20, or customized |
| Ф15,Ф20，Ф1″，Ф2″,Ф2.6″ | |
| Thickness | 0.5mm，1.0mm |
| Polishing | Single or double-sided |
| Crystal orientation | ＜100＞ ＜001> |
| Crystal face orientation precision: | ±0.5° |
| Edge orientation precision: | 2° (up to 1°) |
| Slant chip | A wafer that can be tilted at a specific angle (1° -45°) |
| Ra: | ≤5Å（5µm×5µm） |
| Package | 100 clean bag, 1000 ultra-clean room |
